Fanuc, IGBT MODULE
Toshiba Dual IGBT Module MG150J1BS11
- Module Type: Dual IGBT Module
- Collector-Emitter Voltage (\(V_{CES}\)): 600 V
- Gate-Emitter Voltage (\(V_{GES}\)): \(\pm 20\) V
- Collector Current (\(I_{C}\)): 150 A (DC)
- Collector Current (\(I_{CP}\)): 300 A (\(1ms\))
- Collector Power Dissipation (\(P_{C}\)): 450 W
- Max Junction Temperature (\(T_{j}\)): 150 °C
- Saturation Voltage (\(V_{CE(sat)}\)): 2.7 V (Max) at 150A
- Switching Times: \(t_f = 1.0 \mu s\) (Max) at 150A
- Isolation Voltage (\(V_{Isol}\)): 2500 Vrms (AC 1 minute)
- Weight: Approx. 86-100g
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