Fanuc, IGBT MODULE
FF150R12KT3G IGBT MODULE
- Collector-Emitter Voltage (\(V_{CES}\)): 1200 V
- Continuous DC Collector Current (\(I_{C}\)): 150 A (\(T_C = 80^\circ C\))
- Peak Collector Current (\(I_{CRM}\)): 300 A (\(t_p = 1\text{ms}\))
- Configuration: Half-bridge
- Saturation Voltage (\(V_{CEsat}\)): 1.9 V (Typ, \(T_{vj} = 125^\circ C\), 150A)
- Maximum Junction Temp (\(T_{vjmax}\)): 150°C
- Internal Gate Resistance (\(R_{Gint}\)): 5.0 \(\Omega \)
- Package: 62 mm module
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